Wave Issue 0416 4/30/04 Article 3-01

***Samsung Electronics Introduces Higher-speed 2Gb NAND Flash
Memory

SEOUL, South Korea
April 29, 2004

Samsung Electronics announced a speed increase to its 2Gbit (Gb)
NAND Flash memory from 16.4MB/s to 24.1MB/s. This new high-speed
NAND flash memory has improved sequential data-read/write speed
from 50ns to 30ns. This speed increase will improve the
functionality of computer storage systems such as USB Flash
Drives (UFD), high-storage cards and SSD's (Solid State DISK).
With this high-speed 2Gb NAND Flash memory users will be able to
execute programs faster and experience better overall system
performance.

Using 90nm manufacturing process, the new high-speed 2Gb NAND
flash will be available in 3 forms: single chip 2Gb, dual die
package 4Gb, and quad die package 8Gb. The demand for this new,
high-storage memory product is expected to grow rapidly in
applications such as memory cards, USB flash drives, PDA's,
digital camcorders, and MP3 players.

The quad die package 8Gb flash memory has 1Gbytes of storage
density in a single package that can be an alternative memory
solution for existing storage media such as small-size HDDs in
tablet PCs and other diverse applications in the future.

www.samsung.com